General Information
    • ISSN: 2010-0221 (Print)
    • Abbreviated Title: Int. J. Chem. Eng. Appl.
    • Frequency: Biannually
    • DOI: 10.18178/IJCEA
    • Editor-in-Chief: Prof. Dr. Shen-Ming Chen
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Editor-in-chief
Prof. Dr. Shen-Ming Chen
National Taipei University of Technology, Taiwan
 

IJCEA 2015 Vol.6(6): 455-459 ISSN: 2010-0221
DOI: 10.7763/IJCEA.2015.V6.529

Electrical Properties of the Thin Films Using a Low Temperature Supercritical Carbon Dioxide Fluid Process

Kai-Huang Chen, Sean Wu, and Chien-Min Cheng

Abstract—Electrical and physical properties of as-deposited BLTV ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited BLTV ferroelectric thin films were treated by SCF process which mixed with propyl alcohol and pure water. The memory windows increased in C-V curves, and the oxygen vacancy and defect in leakage current density curves were obtained after SCF process treatment. Finally, the improvement properties of as-deposited BLTV thin films after SCF process treatment were investigated by XPS, C-V, and J-E measurement. The mechanism concerning the dependence of electrical properties of the ferroelectric thin films on the SCF process was investigated and discussed.

Index Terms—SCF process, BLTV thin film, memory window, leakage current density, NvFeRAM.

Kai-Huang Chen and Sean-Wu were with the Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute Kaohsiung, R.O.C. , Taiwan (e-mail: d9131802@gmail.com, wu.sean@gmail.com).
Chien-Min Cheng was with the Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, R.O.C., Taiwan (e-mail: ccmin523@gmail.com).

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Cite: Kai-Huang Chen, Sean Wu, and Chien-Min Cheng, "Electrical Properties of the Thin Films Using a Low Temperature Supercritical Carbon Dioxide Fluid Process," International Journal of Chemical Engineering and Applications vol. 6, no. 6, pp. 455-459, 2015.

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